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| PROCESS Power Transistor CP311 Central TM NPN High Voltage Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 900 PRINCIPAL DEVICE TYPES CJDD3110 EPITAXIAL PLANAR 109.5 x 109.5 MILS 9.0 MILS 23.6 x 15.4 MILS 37.8 x 15.8 MILS Al - 30,000A Ti / Ni / Ag - 11,300A 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (15- September 2003) Central TM PROCESS CP311 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (15- September 2003) |
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